BU406D NPN Epitaxial Switching Silicon Si Transistor 60 W 10 A 200 V TOP 66 Case
Caratteristiche
Vcev (Collector emitter voltage) = 400V
Vceo (Collector emitter voltage Ib = 0) = 200V
Vcbo (Collector base voltage) = 400V
Vebo (Emitter base voltage) = 6V
Ic (Collector current) = 7A
Icm (Collector current peak) = 15A
Ib (Base current) = 4A
Pt (Total power dissipation) = 60W