nte361 t-npn si rf power amp 7347360805184 transistor npn silicon 36v ic=0.4a po=2w 407-512mhz to-39ec case rf power amp part no: nte361 hts: 85412900951 coo: us eccn: ear99 supplier standard pack: 1 configuration: single dimension: 6.6(max) x 9.39(max) mm material: si maximum base emitter saturation voltage: n/a maximum collector base voltage: 36 v maximum collector emitter saturation voltage: n/a maximum collector emitter voltage: 16 v maximum collector emitter voltage range: 20 v maximum dc collector current: 0.4 a maximum dc collector current range: 0.12 to 0.5 a maximum emitter base voltage: 4 v maximum power dissipation: 8000 mw maximum transition frequency: n/a minimum dc current gain: 20@100ma@5 v minimum dc current gain range: 2 to 30 mounting: through hole number of elements per chip: 1 operating temperature: -65 to 200 c output power: 2 w packaging: n/a pin count: 3 screening level: n/a supplier package: to-39 type: npn nte electronics ean 7347360805184 item weight 0.00 pounds model number nte361 part number nte361 unspsc code 32111600 7347360805184 NTE361 - NPN Transistor, Si RF Amplifier - 2W Part Numbers 2SC1001(EBC), 4804-3402-301, ECG361, MRF629, NTE361, SA7-3 GTIN 00768249146315 he NTE361 is a silicon NPN transistor designed for 12.5 Volt UHF largesignal amplifier applications in industrial and commercial FM equipment operating to 512MHz. NTE361 - NPN Transistor, Si RF Amplifier - 2W